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http://hdl.handle.net/10773/23985
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DC Field | Value | Language |
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dc.contributor.author | Justino, Celine I. L. | pt_PT |
dc.contributor.author | Rocha-Santos, Teresa A. P. | pt_PT |
dc.contributor.author | Amaral, José P. | pt_PT |
dc.contributor.author | Cardoso, Susana | pt_PT |
dc.contributor.author | Duarte, Armando C. | pt_PT |
dc.date.accessioned | 2018-08-31T15:03:27Z | - |
dc.date.available | 2018-08-31T15:03:27Z | - |
dc.date.issued | 2013 | - |
dc.identifier.issn | 0038-1101 | pt_PT |
dc.identifier.uri | http://hdl.handle.net/10773/23985 | - |
dc.description.abstract | In this work, we report the design and fabrication of field effect transistors based on single-walled carbon nanotubes (NTFETs) with the study of different geometry parameters (distance between electrodes, number of electrodes and thickness of gold layer) on the device performance, i.e., through the extraction of resistance from the output characteristics (I-V measurements) of the fabricated NTFET devices. Therefore, the NTFET device type with lower resistance was selected (based on the study of different geometry parameters) due to its enhanced device performance and thus being preferable for possible sensing experiments. | pt_PT |
dc.description.sponsorship | This work was funded by FEDER under the Operational Program for Competitiveness Factors – COMPETE, and by national funds via FCT (Fundação para a Ciência e a Tecnologia, Portugal) within the framework of research project CARDIOSENSOR (references FCOMP-01-0124-FEDER-010902 and PTDC/SAU-BEB/099042/2008). This work was also funded through scholarships – references SFRH/BD/60429/2009, and SFRH/BPD/65410/2009 under QREN-POPH funds, co-financed by the European Social Fund and Portuguese National Funds from MCTES. | pt_PT |
dc.language.iso | eng | pt_PT |
dc.publisher | Elsevier | pt_PT |
dc.relation | info:eu-repo/grantAgreement/FCT/5876-PPCDTI/99042/PT | pt_PT |
dc.relation | info:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBD%2F60429%2F2009/PT | pt_PT |
dc.relation | info:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBPD%2F65410%2F2009/PT | pt_PT |
dc.rights | restrictedAccess | pt_PT |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | pt_PT |
dc.subject | Field-effect transistors | pt_PT |
dc.subject | Microfabrication process | pt_PT |
dc.subject | Single-walled carbon nanotubes | pt_PT |
dc.title | Effects of geometry parameters of NTFET devices on the I-V measurements | pt_PT |
dc.type | article | pt_PT |
dc.description.version | published | pt_PT |
dc.peerreviewed | yes | pt_PT |
degois.publication.firstPage | 32 | pt_PT |
degois.publication.lastPage | 34 | pt_PT |
degois.publication.title | Solid-State Electronics | pt_PT |
degois.publication.volume | 81 | pt_PT |
dc.identifier.doi | 10.1016/j.sse.2012.12.013 | pt_PT |
Appears in Collections: | CESAM - Artigos DQ - Artigos |
Files in This Item:
File | Description | Size | Format | |
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Justino et al. - 2013 - Effects of geometry parameters of NTFET devices on.pdf | 228.36 kB | Adobe PDF |
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