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http://hdl.handle.net/10773/19169| Title: | The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy |
| Author: | Tsui, H. C. L. Goff, L. E. Barradas, N. P. Alves, E. Pereira, S. Beere, H. E. Farrer, I. Nicoll, C. A. Ritchie, D. A. Moram, M. A. |
| Keywords: | SCANDIUM NITRIDE FILMS BAND-GAP STRUCTURAL-PROPERTIES SPECTRA LAYERS |
| Issue Date: | 2015 |
| Publisher: | WILEY-V C H VERLAG GMBH |
| Abstract: | Epitaxial ScxGa1-xN films with 0 <= x <= 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1-xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N-2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1-xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1-xN. (C) 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/19169 |
| DOI: | 10.1002/pssa.201532292 |
| ISSN: | 1862-6300 |
| Publisher Version: | 10.1002/pssa.201532292 |
| Appears in Collections: | CICECO - Artigos |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy_10.1002pssa.201532292.pdf | 398.94 kB | Adobe PDF |  |
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