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http://hdl.handle.net/10773/19169
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tsui, H. C. L. | pt |
dc.contributor.author | Goff, L. E. | pt |
dc.contributor.author | Barradas, N. P. | pt |
dc.contributor.author | Alves, E. | pt |
dc.contributor.author | Pereira, S. | pt |
dc.contributor.author | Beere, H. E. | pt |
dc.contributor.author | Farrer, I. | pt |
dc.contributor.author | Nicoll, C. A. | pt |
dc.contributor.author | Ritchie, D. A. | pt |
dc.contributor.author | Moram, M. A. | pt |
dc.date.accessioned | 2017-12-07T19:03:15Z | - |
dc.date.issued | 2015 | pt |
dc.identifier.issn | 1862-6300 | pt |
dc.identifier.uri | http://hdl.handle.net/10773/19169 | - |
dc.description.abstract | Epitaxial ScxGa1-xN films with 0 <= x <= 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1-xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N-2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1-xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1-xN. (C) 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim | pt |
dc.language.iso | eng | pt |
dc.publisher | WILEY-V C H VERLAG GMBH | pt |
dc.relation | info:eu-repo/grantAgreement/FCT/5876/147332/PT | pt |
dc.rights | restrictedAccess | por |
dc.subject | SCANDIUM NITRIDE FILMS | pt |
dc.subject | BAND-GAP | pt |
dc.subject | STRUCTURAL-PROPERTIES | pt |
dc.subject | SPECTRA | pt |
dc.subject | LAYERS | pt |
dc.title | The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy | pt |
dc.type | article | pt |
dc.peerreviewed | yes | pt |
ua.distribution | international | pt |
degois.publication.firstPage | 2837 | pt |
degois.publication.issue | 12 | pt |
degois.publication.lastPage | 2842 | pt |
degois.publication.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | pt |
degois.publication.volume | 212 | pt |
dc.date.embargo | 10000-01-01 | - |
dc.relation.publisherversion | 10.1002/pssa.201532292 | pt |
dc.identifier.doi | 10.1002/pssa.201532292 | pt |
Appears in Collections: | CICECO - Artigos |
Files in This Item:
File | Description | Size | Format | |
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The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy_10.1002pssa.201532292.pdf | 398.94 kB | Adobe PDF |
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