Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/18184
Title: | Band gaps of wurtzite ScxGa1-xN alloys |
Author: | Tsui, H C L Goff, L E Rhode, S K Pereira, S Beere, H E Farrer, I Nicoll, C A Ritchie, D A Moram, M A |
Issue Date: | 2015 |
Publisher: | AIP Publishing |
Abstract: | Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1−xN films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I1- and I2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1−xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1−xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/18184 |
DOI: | 10.1063/1.4916679 |
ISSN: | 1077-3118 |
Appears in Collections: | CICECO - Artigos |
Files in This Item:
File | Description | Size | Format | |
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Band gaps of wurtzite ScxGa1-xN alloys_10.10631.4916679.pdf | 621.04 kB | Adobe PDF | View/Open |
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