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Issue DateTitleAuthor(s)TypeAccess Type
19962.2 eV luminescence in GaNHofmann, D. M.; Kovalev, D.; Steude, G.; Volm, D.; Meyer, B. K.; Xavier, C.; Monteiro, T.; Pereira, E.; Mokov, E. N.; Amano, H.; Akasaki, I.conferenceObjectrestrictedAccess
2002Luminescence and structural studies of iron implanted α-Al2O3Monteiro, T.; Boemare, C.; Soares, M.J.; Alves, E.; Marques, C.; McHargue, C.; Ononye, L.C.; Allard, L.F.articlerestrictedAccess
Jun-2006Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrixCerqueira, M. F.; Losurdo, M.; Monteiro, T.; Stepikhova, M.; Soares, M. J.; Peres, M.; Alves, E.articlerestrictedAccess
May-2008Organic light emitting diodes with europium (III) emissive layers based on β-diketonate complexes: The influence of the central ligandSantos, G.; Fonseca, F.J.; Andrade, A.M.; Deichmann, V.; Akcelrud, L.; Braga, S.S.; Coelho, A.C.; Gonçalves, I.S.; Peres, M.; Simões, W.; Monteiro, T.; Pereira, L.articlerestrictedAccess
May-2008Opto-electrical properties of single layer flexible electroluminescence device with ruthenium complexSantos, G.; Fonseca, F.J.; Andrade, A.M.; Patrocínio, A.O.T.; Mizoguchi, S.K.; Iha, N.Y.M.; Peres, M.; Simões, W.; Monteiro, T.; Pereira, L.articlerestrictedAccess
May-2008The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devicesPrabakaran, R.; Peres, M.; Monteiro, T.; Fortunato, E.; Martins, R.; Ferreira, I.articlerestrictedAccess
Jun-2006Optical active centres in ZnO samplesMonteiro, T.; Soares, M.J.; Neves, A.; Pereira, S.; Correia, M.R.; Peres, M.; Alves, E.; Rogers, D.; Teherani, F.; Munoz-SanJose, V.; Trindade, T.; Pereira, A.articlerestrictedAccess
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