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Issue Date | Title | Author(s) | Type | Access Type |
---|---|---|---|---|
2012 | AIN content influence on the properties of Al x Ga1- x N doped with Pr ions | Fialho, M.; Magalhães, Sérgio; Alves, L.C.; Marques, C.; Maalej, R.; Monteiro, Teresa; Lorenz, K.; Alves, E. | article | |
15-Dec-2018 | Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures | Fialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E. | article |
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