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2011
Radiation damage formation and annealing in GaN and ZnO
Lorenz, K.
;
Peres, M.
;
Franco, N.
;
Marques, J.G.
;
Miranda, S.M.C.
;
Magalhães, S.
;
Monteiro, T.
;
Wesch, W.
;
Alves, E.
;
Wendler, E.
conferenceObject
2012
AIN content influence on the properties of Al x Ga1- x N doped with Pr ions
Fialho, M.
;
Magalhães, Sérgio
;
Alves, L.C.
;
Marques, C.
;
Maalej, R.
;
Monteiro, Teresa
;
Lorenz, K.
;
Alves, E.
article
15-Dec-2018
Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures
Fialho, M.
;
Magalhães, S.
;
Rodrigues, J.
;
Chauvat, M.P.
;
Ruterana, P.
;
Monteiro, T.
;
Lorenz, K.
;
Alves, E.
article
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Alves, E.
2
Fialho, M.
2
Magalhães, S.
2
Monteiro, T.
1
Alves, L.C.
1
Chauvat, M.P.
1
Franco, N.
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Maalej, R.
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Magalhães, Sérgio
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Marques, C.
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Subject
2
AlGaN
2
Photoluminescence
1
GaN
1
ion implantation
1
Ionoluminescence
1
neutron irradiation
1
Rare earth implantation
1
Rutherford Backscattering Spectro...
1
Rutherford backscattering spectro...
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Rutherford backscattering/channeling
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Date issued
1
2018
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2012
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2011