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Issue DateTitleAuthor(s)TypeAccess Type
1-Jul-2013The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ionsSoares, M. R. N.; Soares, M. J.; Alves, L. C.; Alves, E.; Lorenz, K.; Costa, F. M.; Monteiro, T.articlerestrictedAccess
Apr-2007Structural and optical characterisation of Eu implanted AlxGa1-xNLorenz, K.; Alves, E.; Monteiro, T.; Cruz, A.; Peres, M.articlerestrictedAccess
2011Radiation damage formation and annealing in GaN and ZnOLorenz, K.; Peres, M.; Franco, N.; Marques, J.G.; Miranda, S.M.C.; Magalhães, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E.conferenceObjectrestrictedAccess
2006Optical doping of AlN by rare earth implantationLorenz, K.; Alves, E.; Monteiro, T.; Soares, M.J.; Peres, M.; Smulders, P.J.M.articlerestrictedAccess
28-Jan-2010Optical doping and damage formation in AIN by Eu implantationLorenz, K.; Alves, E.; Gloux, F.; Ruterana, P.; Peres, M.; Neves, A. J.; Monteiro, T.articleopenAccess
2010High temperature annealing of Europium implanted AlNLorenz, K.; Magalhães, Sérgio; Alves, E.; Peres, Marco; Monteiro, Teresa; Neves, Armando; Boćkowski, M.articlerestrictedAccess
22-Mar-2008Defect studies on fast and thermal neutron irradiated GaNLorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T.articlerestrictedAccess
2001Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M. J.; Ferreira, R. A. Sá; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E.articlerestrictedAccess
15-Dec-2018Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperaturesFialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E.articleopenAccess
Jun-2019Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with TbRodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T.articleopenAccess
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