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Type
Access Type
Jun-2006
Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline silicon embedded in a silicon amorphous matrix
Cerqueira, M. F.
;
Losurdo, M.
;
Monteiro, T.
;
Stepikhova, M.
;
Soares, M. J.
;
Peres, M.
;
Alves, E.
article
2011
Morphological, structural, optical and dielectric properties of 91SiO2:4Li2O:4Nb2O5:1Dy2O3 (% mole) glass prepared by sol-gel
Valente, M.A.
;
Peres, M.
;
Nico, C.
;
Monteiro, T.
;
Graça, M.P.F.
;
Sombra, A.S.B.
;
Silva, C.C.
article
Aug-2007
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN
Rogers, D.J.
;
Hosseini Teherani, F.
;
Ougazzaden, A.
;
Gautier, S.
;
Divay, L.
;
Lusson, A.
;
Durand, O.
;
Wyczisk, F.
;
Garry, G.
;
Monteiro, T.
;
Correira, M.R.
;
Peres, M.
;
Neves, A.
;
McGrouther, D.
;
Chapman, J.N.
;
Razeghi, M.
article
2011
Morphological, structural, optical and dielectric properties of 91SiO 2:4Li2O:4Nb2O5:1Dy2O 3 (% mole) glass prepared by sol-gel
Valente, M.A.
;
Peres, M.
;
Nico, C.
;
Monteiro, T.
;
Graça, M.P.F.
;
Sombra, A.S.B.
;
Silva, C.C.
article
2010
Defect studies and optical activation of Yb doped GaN
Lorenz, K.
;
Alves, E.
;
Magalhes, S.
;
Peres, M.
;
Monteiro, T.
;
Kozanecki, A.
;
Valerio, M.E.G.
article
2010
Damage recovery and optical activity in europium implanted wide gap oxides
Alves, E.
;
Marques, C.
;
Franco, N.
;
Alves, L.C.
;
Peres, M.
;
Soares, M.J.
;
Monteiro, T.
article
2008
Development and characterization of light-emitting diodes (LEDs) based on ruthenium complex single layer for transparent displays
Santos, G.
;
Fonseca, F.
;
Andrade, A.M.
;
Patrocínio, A.O.T.
;
Mizoguchi, S.K.
;
Iha, N.Y.M.
;
Peres, M.
;
Monteiro, T.
;
Pereira, L.
article
2011
Rapid thermal annealing of rare earth implanted ZnO epitaxial layers
Miranda, S.M.C.
;
Peres, M.
;
Monteiro, T.
;
Alves, E.
;
Sun, H.D.
;
Geruschke, T.
;
Vianden, R.
;
Lorenz, K.
article
May-2008
Organic light emitting diodes with europium (III) emissive layers based on β-diketonate complexes: The influence of the central ligand
Santos, G.
;
Fonseca, F.J.
;
Andrade, A.M.
;
Deichmann, V.
;
Akcelrud, L.
;
Braga, S.S.
;
Coelho, A.C.
;
Gonçalves, I.S.
;
Peres, M.
;
Simões, W.
;
Monteiro, T.
;
Pereira, L.
article
25-Jun-2008
Microwave dielectric permittivity and photoluminescence of Eu 2O3 doped laser heated pedestal growth Ta 2O5 fibers
Rubinger, C.P.L.
;
Costa, L.C.
;
Macatrão, M.
;
Peres, M.
;
Monteiro, T.
;
Costa, F.M.
;
Franco, N.
;
Alves, E.
;
Saggioro, B.Z.
;
Andreeta, M.R.B.
;
Hernandes, A.C.
article
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Photoluminescence
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Ion implantation
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II-VI semiconductors
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Luminescence
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Wide band gap semiconductors
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GaN
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