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Issue Date
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1999
Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R.
;
Gaspar, C.
;
Monteiro, T.
;
Pereira, E.
;
Poisson, M.A.
;
Beaumont, B.
conferenceObject
2003
Optical properties and transport in PLD-GaN
Niehus, M.
;
Sanguino, P.
;
Monteiro, T.
;
Soares, M.J.
;
Pereira, E.
;
Vieira, M.
;
Koynov, S.
;
Schwarz, R.
article
2001
Photoluminescence and lattice location of Eu and Pr implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M. J.
;
Ferreira, R. A. Sá
;
Carlos, L. D.
;
Lorenz, K.
;
Vianden, R.
;
Alves, E.
article
1999
Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy
Seitz, R.
;
Monteiro, T.
;
Pereira, E.
;
Di Forte-Poisson, M.
article
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Monteiro, T.
3
Pereira, E.
2
Seitz, R.
1
Alves, E.
1
Beaumont, B.
1
Boemare, C.
1
Carlos, L. D.
1
Di Forte-Poisson, M.
1
Ferreira, R. A. Sá
1
Gaspar, C.
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Subject
2
Gallium nitride
1
Activation energy
1
Crystal orientation
1
Electron emission
1
Electron energy levels
1
Emission Bands
1
Energy gap
1
Excitons
1
GaN
1
Gas lasers
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2003
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1999