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Issue DateTitleAuthor(s)TypeAccess Type
2011Radiation damage formation and annealing in GaN and ZnOLorenz, K.; Peres, M.; Franco, N.; Marques, J.G.; Miranda, S.M.C.; Magalhães, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E.conferenceObjectrestrictedAccess
2010Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/Aluminium Nitride SuperlatticePeres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Franco, N.; Lorenz, K.; Alves, E.; Damilano, B.; Massies, J.; Dussaigne, A.; Grandjean, N.articlerestrictedAccess
2011The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QDPeres, Marco; Magalhães, Sérgio; Rodrigues, Joana; Soares, Manuel; Fellmann, V.; Neves, Armando; Alves, E.; Daudin, B.; Lorenz, K.; Monteiro, TeresaarticlerestrictedAccess
22-Mar-2008Defect studies on fast and thermal neutron irradiated GaNLorenz, K.; Marques, J.G.; Franco, N.; Alves, E.; Peres, M.; Correia, M.R.; Monteiro, T.articlerestrictedAccess
2003Implantation and annealing studies of Tm-implanted GaNLorenz, K.; Alves, E.; Wahl, U.; Monteiro, T.; Dalmasso, S.; Martin, R.W.; O'Donnell, K.P.; Vianden, R.articlerestrictedAccess
2003Lattice location and optical activation of rare earth implanted GaNWahl, U.; Alves, E.; Lorenz, K.; Correia, J.G.; Monteiro, T.; De Vries, B.; Vantomme, A.; Vianden, R.articlerestrictedAccess
2001Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M. J.; Ferreira, R. A. Sá; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E.articlerestrictedAccess
15-Feb-2012Influence of neutron irradiation and annealing on the optical properties of GaNRodrigues, J.; Peres, M.; Soares, M. J.; Lorenz, K.; Marques, J. G.; Neves, A. J.; Monteiro, T.articlerestrictedAccess
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