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2011
Radiation damage formation and annealing in GaN and ZnO
Lorenz, K.
;
Peres, M.
;
Franco, N.
;
Marques, J.G.
;
Miranda, S.M.C.
;
Magalhães, S.
;
Monteiro, T.
;
Wesch, W.
;
Alves, E.
;
Wendler, E.
conferenceObject
2010
Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/Aluminium Nitride Superlattice
Peres, M.
;
Neves, A.J.
;
Monteiro, T.
;
Magalhães, S.
;
Franco, N.
;
Lorenz, K.
;
Alves, E.
;
Damilano, B.
;
Massies, J.
;
Dussaigne, A.
;
Grandjean, N.
article
22-Mar-2008
Defect studies on fast and thermal neutron irradiated GaN
Lorenz, K.
;
Marques, J.G.
;
Franco, N.
;
Alves, E.
;
Peres, M.
;
Correia, M.R.
;
Monteiro, T.
article
2003
Implantation and annealing studies of Tm-implanted GaN
Lorenz, K.
;
Alves, E.
;
Wahl, U.
;
Monteiro, T.
;
Dalmasso, S.
;
Martin, R.W.
;
O'Donnell, K.P.
;
Vianden, R.
article
2003
Lattice location and optical activation of rare earth implanted GaN
Wahl, U.
;
Alves, E.
;
Lorenz, K.
;
Correia, J.G.
;
Monteiro, T.
;
De Vries, B.
;
Vantomme, A.
;
Vianden, R.
article
2001
Photoluminescence and lattice location of Eu and Pr implanted GaN samples
Monteiro, T.
;
Boemare, C.
;
Soares, M. J.
;
Ferreira, R. A. Sá
;
Carlos, L. D.
;
Lorenz, K.
;
Vianden, R.
;
Alves, E.
article
15-Feb-2012
Influence of neutron irradiation and annealing on the optical properties of GaN
Rodrigues, J.
;
Peres, M.
;
Soares, M. J.
;
Lorenz, K.
;
Marques, J. G.
;
Neves, A. J.
;
Monteiro, T.
article
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Ion implantation
3
Photoluminescence
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