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15-Dec-2018
Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures
Fialho, M.
;
Magalhães, S.
;
Rodrigues, J.
;
Chauvat, M.P.
;
Ruterana, P.
;
Monteiro, T.
;
Lorenz, K.
;
Alves, E.
article
2012
Optical doping of AlxGa1-xN compounds by ion implantation of Tm ions
Fialho, M.
;
Lorenz, K.
;
Magalhães, S
;
Redondo-Cubero, A.
;
Rodrigues, J.
;
Santos, N.F
;
Monteiro, T.
;
Alves, E.
article
Jun-2019
Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb
Rodrigues, J.
;
Fialho, M.
;
Magalhães, S.
;
Lorenz, K.
;
Alves, E.
;
Monteiro, T.
article
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Lorenz, K.
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Magalhães, S.
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Chauvat, M.P.
1
Magalhães, S
1
Redondo-Cubero, A.
1
Ruterana, P.
1
Santos, N.F
Subject
2
AlGaN
2
Photoluminescence
1
AlxGa1-xN
1
HRXRD
1
Ion Implantation
1
Ion implantation
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PL
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RBS/C
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Rutherford backscattering spectro...
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