Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/11841
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dc.contributor.authorDuarte, João Capelapt
dc.contributor.authorMartins, Ernesto Venturapt
dc.contributor.authorAlves, Luis Neropt
dc.date.accessioned2014-02-17T17:49:20Z-
dc.date.issued2013-12-15-
dc.identifier.urihttp://hdl.handle.net/10773/11841-
dc.description.abstractMemristive Devices (MDs) are usually described by their associated hysteresis loops. Their distinctive memory properties stem from this unusual characteristic, which depends on both stimulus frequency and amplitude. Understanding the behavior of these devices is of paramount importance for a multitude of different applications. This paper investigates the dependency of loop area and length on stimulus amplitude of MDs. The characterization methodology follows the morphological approach, introduced by the authors in [10], for frequency characterization. An example, considering thin film TiO2 MDs reveals that the peak amplitude (amplitude where the loop has maximum area) of the device depends strongly on device dimensions and physical properties.pt
dc.language.isoengpt
dc.publisherIEEEpt
dc.rightsrestrictedAccesspor
dc.subjectMemristive devices and systemspt
dc.subjectHysteretic loopspt
dc.subjectAmplitude characterizationpt
dc.titleAmplitude characterization of memristive devicespt
dc.typeconferenceObjectpt
dc.peerreviewedyespt
ua.publicationstatuspublishedpt
ua.event.date8-11 december, 2013pt
ua.event.typeconferencept
degois.publication.locationAbu Dhabi, EAUpt
degois.publication.titleIEEE International Conference on Electronics, Circuits, and Systemspt
dc.date.embargo10000-01-01-
dc.relation.publisherversionhttp://www.ieee-icecs2013.org/pt
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