Showing results 44 to 63 of 150
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Issue Date | Title | Author(s) | Type | Access Type |
15-Feb-2012 | Influence of neutron irradiation and annealing on the optical properties of GaN | Rodrigues, J.; Peres, M.; Soares, M. J.; Lorenz, K.; Marques, J. G.; Neves, A. J.; Monteiro, T. | article | |
Sep-2007 | Influence of the sol-gel growth parameters on the optical and structural properties on LiNbO3 samples | Graça, M.P.F.; Valente, M.A.; Peres, M.; Cruz, A.; Soares, M.J.; Neves, A.J.; Monteiro, T.; Alves, E.; Marques, C. | article | |
7-May-2010 | Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots | Peres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Alves, E.; Lorenz, K.; Okuno-Vila, H.; Fellmann, V.; Bougerol, C.; Daudin, B. | article | |
15-Oct-2020 | Insights on luminescence quenching of ZnO tetrapods in the detection of hCG | Rodrigues, J.; Pereira, S. O.; Santos, N. F.; Rodrigues, C.; Costa, F. M.; Monteiro, T. | article | |
2006 | Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition | Rogers, D.J.; Teherani, F.H.; Monteiro, T.; Soares, M.; Neves, A.; Carmo, M.; Pereira, S.; Correia, M.R.; Lusson, A.; Alves, E.; Barradas, N.P.; Morrod, J.K.; Prior, K.A.; Kung, P.; Yasan, A.; Razeghi, M. | conferenceObject | |
1-Mar-2009 | Ion beam processing of sapphire single crystals | Alves, E.; Marques, C.; da Silva, R.C.; Monteiro, T.; McHargue, C. | article | |
2002 | Ion beam studies of MBE grown GaN films on (1 1 1) silicon substrates | Alves, E.; Barradas, N.P.; Monteiro, T.; Correia, R.; Kreissig, U. | article | |
4-Jan-2022 | Label-free nanoscale ZnO tetrapod-based transducers for tetracycline detection | Brás, M.; Zanoni, J.; Falcão, B. P.; Leitão, J. P.; Costa, F. M.; Monteiro, T.; Pereira, S. O.; Rodrigues, J. | article | |
Aug-2012 | Laser assisted flow deposition: a new method to grow ZnO | Rodrigues, J.; Soares, M.R.N.; Fernandes, A.J.S.; Monteiro, T.; Costa, F.M. | article | |
2003 | Lattice location and optical activation of rare earth implanted GaN | Wahl, U.; Alves, E.; Lorenz, K.; Correia, J.G.; Monteiro, T.; De Vries, B.; Vantomme, A.; Vianden, R. | article | |
2006 | Layer-by-layer deposition of organically capped quantum dots | Neves, M.C.; Pereira, A.S.; Peres, M.; Kholkin, A.; Monteiro, T.; Trindade, T. | article | |
2011 | Lithium niobosilicate glass doped with samarium: Dielectric and optical analysis | Nico, C.; Graça, M.P.F.; Monteiro, T.; Valente, M.A. | article | |
1992 | Low temperature behaviour of a complex luminescence in Mn-doped GaP in the region of 1.7-1.8 eV | Monteiro, T.; Pereira, E. | article | |
2002 | Low temperature photoluminescence, transient photoconductivity and microwave reflection for optical properties and transport in PLD-GaN | Niehus, M.,; Sanguino, P.; Schwarz, R.; Monteiro, T.; Soares, M.J.; Pereira, E.; Kunst, M.; Koyonov, S. | article | |
2006 | Luminescence and structural properties of defects in ion implanted ZnO | Monteiro, T.; Soares, M.J.; Neves, A.J.; Carmo, M.C.; Peres, M.; Cruz, A.; Alves, E.; Wahl, U.; Rita, E.; Munoz-SanJose, V.; Zuniga-Perez, J. | conferenceObject | |
2002 | Luminescence and structural studies of iron implanted α-Al2O3 | Monteiro, T.; Boemare, C.; Soares, M.J.; Alves, E.; Marques, C.; McHargue, C.; Ononye, L.C.; Allard, L.F. | article | |
1992 | Luminescence at 1.96 eV in n-type GaP | Pereira, E.; Monteiro, T. | article | |
Jun-2019 | Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb | Rodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T. | article | |
28-May-2008 | Luminescence properties of the TRIMEB inclusion compound of a europium tris-β-diketonate | Braga, S.S.; Coelho, A.C.; Gonçalves, I.S.; Santos, G.; Fonseca, F.J.; Andrade, A.M.; Peres, M.; Simões, W.; Monteiro, T.; Pereira, L. | article | |
2002 | Luminescence studies of Co implanted sapphires | Monteiro, T.; Soares, M.J.; Santos, L.; Boemare, C.; Cascalheira, J.; Alves, L.C.; Alves, E. | article | |