Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/20808
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dc.contributor.authorBretos, Inigopt
dc.contributor.authorJimenez, Ricardopt
dc.contributor.authorWu, Aiyingpt
dc.contributor.authorKingon, Angus I.pt
dc.contributor.authorVilarinho, Paula M.pt
dc.contributor.authorLourdes Calzada, M.pt
dc.date.accessioned2017-12-07T20:00:07Z-
dc.date.issued2014pt
dc.identifier.issn0935-9648pt
dc.identifier.urihttp://hdl.handle.net/10773/20808-
dc.description.abstractFunctional ferroelectric oxides for flexible electronics are achieved from activated solutions enabling low-temperature processing and large-area deposition directly on polymeric substrates. This processing technology reaches the lower limit temperature of crystallization at 300 °C, using a strategy that combines seeded diphasic precursors and photochemical solution deposition. Properties of these materials are comparable to those of high-temperature-processed counterparts and organic ferroelectrics.pt
dc.language.isoengpt
dc.publisherWILEY-V C H VERLAG GMBHpt
dc.relationinfo:eu-repo/grantAgreement/FCT/COMPETE/132936/PTpt
dc.rightsrestrictedAccesspor
dc.subjectTHIN-FILM TRANSISTORSpt
dc.subjectFIELD-EFFECT TRANSISTORpt
dc.subjectSOL-GELpt
dc.subjectFABRICATIONpt
dc.subjectPOLYMERpt
dc.subjectDIELECTRICSpt
dc.subjectTECHNOLOGYpt
dc.subjectDEPOSITIONpt
dc.subjectCIRCUITSpt
dc.titleActivated Solutions Enabling Low-Temperature Processing of Functional Ferroelectric Oxides for Flexible Electronicspt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage1405pt
degois.publication.issue9pt
degois.publication.lastPage1409pt
degois.publication.titleADVANCED MATERIALSpt
degois.publication.volume26pt
dc.date.embargo10000-01-01-
dc.relation.publisherversion10.1002/adma.201304308pt
dc.identifier.doi10.1002/adma.201304308pt
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