Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/19467
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dc.contributor.authorPinto, R. M.pt
dc.contributor.authorGouveia, W.pt
dc.contributor.authorNeves, A. I. S.pt
dc.contributor.authorAlves, H.pt
dc.date.accessioned2017-12-07T19:13:45Z-
dc.date.available2017-12-07T19:13:45Z-
dc.date.issued2015pt
dc.identifier.issn0003-6951pt
dc.identifier.urihttp://hdl.handle.net/10773/19467-
dc.description.abstractWe report on highly efficient organic phototransistors (OPTs) based on thin-film/single-crystal planar bilayer junctions between 5,6,11,12-tetraphenyltetracene (rubrene) and [ 6,6]-phenyl-C-61-butyric acid methyl ester (PC61BM). The OPTs show good field-effect characteristics in the dark, with high hole-mobility (4-5cm(2) V-1 s(-1)), low-contact resistance (20 k Omega cm), and low-operating voltage (<= 5V). Excellent sensing capabilities allow for light detection in the 400-750 nm range, with photocurrent/dark current ratio as high as 4 x 10(4), responsivity on the order of 20AW(-1) at 27 mu Wcm(-2), and an external quantum efficiency of 52 000%. Photocurrent generation is attributed to enhanced electron and hole transfer at the interface between rubrene and PC61BM, and fast response times are observed as a consequence of the high-mobility of the interfaces. The optoelectronic properties exhibited in these OPTs outperform those typically provided by a-Si based devices, enabling future applications where multifunctionality in a single-device is sought. (C) 2015 AIP Publishing LLC.pt
dc.language.isoengpt
dc.publisherAMER INST PHYSICSpt
dc.relationinfo:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBPD%2F84820%2F2012/PTpt
dc.relationinfo:eu-repo/grantAgreement/FCT/5876/147332/PTpt
dc.rightsopenAccesspor
dc.subjectFIELD-EFFECT TRANSISTORSpt
dc.subjectN-TYPEpt
dc.subjectQUANTUM EFFICIENCYpt
dc.subjectPHOTODETECTORSpt
dc.subjectMOBILITYpt
dc.subjectHETEROSTRUCTUREpt
dc.subjectSEMICONDUCTORSpt
dc.subjectPHOTORESPONSEpt
dc.subjectINTERFACESpt
dc.subjectGROWTHpt
dc.titleUltrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structurespt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.issue22pt
degois.publication.titleAPPLIED PHYSICS LETTERSpt
degois.publication.volume107pt
dc.relation.publisherversion10.1063/1.4937005pt
dc.identifier.doi10.1063/1.4937005pt
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