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1-Jul-2013
The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ions
Soares, M. R. N.
;
Soares, M. J.
;
Alves, L. C.
;
Alves, E.
;
Lorenz, K.
;
Costa, F. M.
;
Monteiro, T.
article
2011
Radiation damage formation and annealing in GaN and ZnO
Lorenz, K.
;
Peres, M.
;
Franco, N.
;
Marques, J.G.
;
Miranda, S.M.C.
;
Magalhães, S.
;
Monteiro, T.
;
Wesch, W.
;
Alves, E.
;
Wendler, E.
conferenceObject
28-Jan-2010
Optical doping and damage formation in AIN by Eu implantation
Lorenz, K.
;
Alves, E.
;
Gloux, F.
;
Ruterana, P.
;
Peres, M.
;
Neves, A. J.
;
Monteiro, T.
article
2010
High temperature annealing of Europium implanted AlN
Lorenz, K.
;
Magalhães, Sérgio
;
Alves, E.
;
Peres, Marco
;
Monteiro, Teresa
;
Neves, Armando
;
Boćkowski, M.
article
15-Dec-2018
Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures
Fialho, M.
;
Magalhães, S.
;
Rodrigues, J.
;
Chauvat, M.P.
;
Ruterana, P.
;
Monteiro, T.
;
Lorenz, K.
;
Alves, E.
article
Jun-2019
Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb
Rodrigues, J.
;
Fialho, M.
;
Magalhães, S.
;
Lorenz, K.
;
Alves, E.
;
Monteiro, T.
article
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Ion implantation
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Rutherford Backscattering Spectro...
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X-ray diffraction
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AlGaN
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