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Issue DateTitleAuthor(s)TypeAccess Type
Apr-2007Structural and optical characterisation of Eu implanted AlxGa1-xNLorenz, K.; Alves, E.; Monteiro, T.; Cruz, A.; Peres, M.articlerestrictedAccess
Nov-2005Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ionsMonteiro, T.; Neves, A. J.; Soares, M. J.; Carmo, M. C.; Peres, M.; Alves, E.; Rita, E.articleopenAccess
2000Effect of crystal orientation on defect production and optical activation of Er-implanted sapphireAlves, E.; Silva, M.F.; Soares, J.C.; Monteiro, T.; Soares, J.; Santos, L.articlerestrictedAccess
2000Steady-state and time-resolved luminescence in InGaN layersSeitz, R.; Gaspar, C.; Correia, M.; Monteiro, T.; Pereira, E.; Heuken, M.; Schoen, O.articlerestrictedAccess
2006Luminescence and structural properties of defects in ion implanted ZnOMonteiro, T.; Soares, M.J.; Neves, A.J.; Carmo, M.C.; Peres, M.; Cruz, A.; Alves, E.; Wahl, U.; Rita, E.; Munoz-SanJose, V.; Zuniga-Perez, J.conferenceObjectrestrictedAccess
3-Nov-2009Structural and optical properties of Zn0.9 Mn0.1 O/ZnO core-shell nanowires designed by pulsed laser depositionKaydashev, V.E.; Kaidashev, E.M.; Peres, M.; Monteiro, T.; Correia, M.R.; Sobolev, N.A.; Alves, L.C.; Franco, N.; Alves, E.articleopenAccess
Jul-2005Near-band-edge slow luminescence in nominally undoped bulk ZnOMonteiro, T.; Neves, A.J.; Carmo, M.C.; Soares, M.J.; Peres, M.; Wang, J.; Alves, E.; Rita, E.; Wahl, U.articleopenAccess
Sep-2006Optical behaviour of Er doped rutile by ion implantationAlves, E.; Pinto, J.V.; da Silva, R.C.; Peres, M.; Soares, M.J.; Monteiro, T.articlerestrictedAccess
2006Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dotsCerqueira, M.F.; Stepikhova, M.; Losurdo, M.; Monteiro, T.; Soares, M.J.; Peres, M.; Neves, A.; Alves, E.articleopenAccess
2006Stability and luminescence studies of Tm and Er implanted ZnO single crystalsRita, E.; Alves, E.; Wahl, U.; Correia, J.G.; Monteiro, T.; Soares, M.J.; Neves, A.; Peres, M.articlerestrictedAccess
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