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2008
Photo and electroluminescence behavior of Tb(ACAC)3phen complex used as emissive layer on organic light emitting diodes
Rino, Luís
;
Simões, W.
;
Santos, G.
;
Fonseca, F. J.
;
Andrade, A. M.
;
Deichmann, V. A. F.
;
Akcelrud, L.
;
Pereira, Luiz
article
Apr-2007
Structural and optical characterisation of Eu implanted AlxGa1-xN
Lorenz, K.
;
Alves, E.
;
Monteiro, T.
;
Cruz, A.
;
Peres, M.
article
Nov-2005
Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions
Monteiro, T.
;
Neves, A. J.
;
Soares, M. J.
;
Carmo, M. C.
;
Peres, M.
;
Alves, E.
;
Rita, E.
article
2000
Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire
Alves, E.
;
Silva, M.F.
;
Soares, J.C.
;
Monteiro, T.
;
Soares, J.
;
Santos, L.
article
2000
Steady-state and time-resolved luminescence in InGaN layers
Seitz, R.
;
Gaspar, C.
;
Correia, M.
;
Monteiro, T.
;
Pereira, E.
;
Heuken, M.
;
Schoen, O.
article
2006
Luminescence and structural properties of defects in ion implanted ZnO
Monteiro, T.
;
Soares, M.J.
;
Neves, A.J.
;
Carmo, M.C.
;
Peres, M.
;
Cruz, A.
;
Alves, E.
;
Wahl, U.
;
Rita, E.
;
Munoz-SanJose, V.
;
Zuniga-Perez, J.
conferenceObject
3-Nov-2009
Structural and optical properties of Zn0.9 Mn0.1 O/ZnO core-shell nanowires designed by pulsed laser deposition
Kaydashev, V.E.
;
Kaidashev, E.M.
;
Peres, M.
;
Monteiro, T.
;
Correia, M.R.
;
Sobolev, N.A.
;
Alves, L.C.
;
Franco, N.
;
Alves, E.
article
Jul-2005
Near-band-edge slow luminescence in nominally undoped bulk ZnO
Monteiro, T.
;
Neves, A.J.
;
Carmo, M.C.
;
Soares, M.J.
;
Peres, M.
;
Wang, J.
;
Alves, E.
;
Rita, E.
;
Wahl, U.
article
Sep-2006
Optical behaviour of Er doped rutile by ion implantation
Alves, E.
;
Pinto, J.V.
;
da Silva, R.C.
;
Peres, M.
;
Soares, M.J.
;
Monteiro, T.
article
2006
Effect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dots
Cerqueira, M.F.
;
Stepikhova, M.
;
Losurdo, M.
;
Monteiro, T.
;
Soares, M.J.
;
Peres, M.
;
Neves, A.
;
Alves, E.
article
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Ion implantation
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