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Issue Date | Title | Author(s) | Type | Access Type |
---|---|---|---|---|
1999 | Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers | Seitz, R.; Gaspar, C.; Monteiro, T.; Pereira, E.; Poisson, M.A.; Beaumont, B. | conferenceObject | |
2003 | Optical properties and transport in PLD-GaN | Niehus, M.; Sanguino, P.; Monteiro, T.; Soares, M.J.; Pereira, E.; Vieira, M.; Koynov, S.; Schwarz, R. | article | |
1999 | Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy | Seitz, R.; Monteiro, T.; Pereira, E.; Di Forte-Poisson, M. | article |
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