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2006
High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Lorenz, K.
;
Wahl, U.
;
Alves, E.
;
Nogales, E.
;
Dalmasso, S.
;
Martin, R.W.
;
O'Donnell, K.P.
;
Wojdak, M.
;
Braud, A.
;
Monteiro, T.
;
Wojtowicz, T.
;
Ruterana, P.
;
Ruffenach, S.
;
Briot, O.
article
28-Jan-2010
Optical doping and damage formation in AIN by Eu implantation
Lorenz, K.
;
Alves, E.
;
Gloux, F.
;
Ruterana, P.
;
Peres, M.
;
Neves, A. J.
;
Monteiro, T.
article
15-Dec-2018
Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures
Fialho, M.
;
Magalhães, S.
;
Rodrigues, J.
;
Chauvat, M.P.
;
Ruterana, P.
;
Monteiro, T.
;
Lorenz, K.
;
Alves, E.
article
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Alves, E.
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Braud, A.
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Briot, O.
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Chauvat, M.P.
1
Dalmasso, S.
1
Fialho, M.
1
Gloux, F.
1
Magalhães, S.
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Martin, R.W.
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Neves, A. J.
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Subject
2
Annealing
2
Photoluminescence
1
AlGaN
1
Aluminium compounds
1
Gallium nitride
1
High temperature effects
1
III-V semiconductors
1
Ion beams
1
Ion implantation
1
Optical properties
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Date issued
2
2010 - 2018
1
2006 - 2009