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1-Jul-2013
The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ions
Soares, M. R. N.
;
Soares, M. J.
;
Alves, L. C.
;
Alves, E.
;
Lorenz, K.
;
Costa, F. M.
;
Monteiro, T.
article
21-Oct-2010
Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation
Magalhães, S.
;
Peres, M.
;
Fellmann, V.
;
Daudin, B.
;
Neves, A.J.
;
Alves, E.
;
Monteiro, T.
;
Lorenz, K.
article
2011
Radiation damage formation and annealing in GaN and ZnO
Lorenz, K.
;
Peres, M.
;
Franco, N.
;
Marques, J.G.
;
Miranda, S.M.C.
;
Magalhães, S.
;
Monteiro, T.
;
Wesch, W.
;
Alves, E.
;
Wendler, E.
conferenceObject
2010
Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/Aluminium Nitride Superlattice
Peres, M.
;
Neves, A.J.
;
Monteiro, T.
;
Magalhães, S.
;
Franco, N.
;
Lorenz, K.
;
Alves, E.
;
Damilano, B.
;
Massies, J.
;
Dussaigne, A.
;
Grandjean, N.
article
28-Jan-2010
Optical doping and damage formation in AIN by Eu implantation
Lorenz, K.
;
Alves, E.
;
Gloux, F.
;
Ruterana, P.
;
Peres, M.
;
Neves, A. J.
;
Monteiro, T.
article
2011
Structural and optical properties of Er implanted AlN thin films: green and infrared photoluminescence at room temperature
Soares, M.J.
;
Leitão, J.P.
;
Silva, M.I.N. da
;
González, J.C.
;
Matinaga, F.M.
;
Lorenz, K.
;
Alves, E.
;
Peres, M.
;
Monteiro, T.
article
2010
Defect studies and optical activation of Yb doped GaN
Lorenz, K.
;
Alves, E.
;
Magalhes, S.
;
Peres, M.
;
Monteiro, T.
;
Kozanecki, A.
;
Valerio, M.E.G.
article
2011
The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD
Peres, Marco
;
Magalhães, Sérgio
;
Rodrigues, Joana
;
Soares, Manuel
;
Fellmann, V.
;
Neves, Armando
;
Alves, E.
;
Daudin, B.
;
Lorenz, K.
;
Monteiro, Teresa
article
2010
High temperature annealing of Europium implanted AlN
Lorenz, K.
;
Magalhães, Sérgio
;
Alves, E.
;
Peres, Marco
;
Monteiro, Teresa
;
Neves, Armando
;
Boćkowski, M.
article
2010
Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structures
Magalhães, Sérgio
;
Lorenz, K.
;
Franco, N.
;
Barradas, N.P.
;
Alves, E.
;
Monteiro, Teresa
;
Amstatt, B.
;
Fellmann, V.
;
Daudin, B.
article
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Ion implantation
6
Photoluminescence
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GaN
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Quantum dots
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RBS
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AlGaN
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PL
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X-ray diffraction
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