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Issue DateTitleAuthor(s)TypeAccess Type
1-Jul-2013The influence of photon excitation and proton irradiation on the luminescence properties of yttria stabilized zirconia doped with praseodymium ionsSoares, M. R. N.; Soares, M. J.; Alves, L. C.; Alves, E.; Lorenz, K.; Costa, F. M.; Monteiro, T.articlerestrictedAccess
21-Oct-2010Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantationMagalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K.articleopenAccess
2011Radiation damage formation and annealing in GaN and ZnOLorenz, K.; Peres, M.; Franco, N.; Marques, J.G.; Miranda, S.M.C.; Magalhães, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E.conferenceObjectrestrictedAccess
2010Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/Aluminium Nitride SuperlatticePeres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Franco, N.; Lorenz, K.; Alves, E.; Damilano, B.; Massies, J.; Dussaigne, A.; Grandjean, N.articlerestrictedAccess
28-Jan-2010Optical doping and damage formation in AIN by Eu implantationLorenz, K.; Alves, E.; Gloux, F.; Ruterana, P.; Peres, M.; Neves, A. J.; Monteiro, T.articleopenAccess
2011Structural and optical properties of Er implanted AlN thin films: green and infrared photoluminescence at room temperatureSoares, M.J.; Leitão, J.P.; Silva, M.I.N. da; González, J.C.; Matinaga, F.M.; Lorenz, K.; Alves, E.; Peres, M.; Monteiro, T.articleopenAccess
2010Defect studies and optical activation of Yb doped GaNLorenz, K.; Alves, E.; Magalhes, S.; Peres, M.; Monteiro, T.; Kozanecki, A.; Valerio, M.E.G.articlerestrictedAccess
2011The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QDPeres, Marco; Magalhães, Sérgio; Rodrigues, Joana; Soares, Manuel; Fellmann, V.; Neves, Armando; Alves, E.; Daudin, B.; Lorenz, K.; Monteiro, TeresaarticlerestrictedAccess
2010High temperature annealing of Europium implanted AlNLorenz, K.; Magalhães, Sérgio; Alves, E.; Peres, Marco; Monteiro, Teresa; Neves, Armando; Boćkowski, M.articlerestrictedAccess
2010Effect of annealing on AlN/GaN quantum dot heterostructures: Advanced ion beam characterization and X-ray study of low-dimensional structuresMagalhães, Sérgio; Lorenz, K.; Franco, N.; Barradas, N.P.; Alves, E.; Monteiro, Teresa; Amstatt, B.; Fellmann, V.; Daudin, B.articlerestrictedAccess
Results 1-10 of 18 (Search time: 0.004 seconds).