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22-Mar-2008
Defect studies on fast and thermal neutron irradiated GaN
Lorenz, K.
;
Marques, J.G.
;
Franco, N.
;
Alves, E.
;
Peres, M.
;
Correia, M.R.
;
Monteiro, T.
article
May-2008
The effects of ZnO coating on the photoluminescence properties of porous silicon for the advanced optoelectronic devices
Prabakaran, R.
;
Peres, M.
;
Monteiro, T.
;
Fortunato, E.
;
Martins, R.
;
Ferreira, I.
article
2003
Structural and optical studies of Co and Ti implanted sapphire
Alves, E.
;
Marques, C.
;
Silva, R.C. da
;
Monteiro, T.
;
Soares, J.
;
McHargue, C.
;
Ononye, L.C.
;
Allard, L.F.
article
2003
Implantation and annealing studies of Tm-implanted GaN
Lorenz, K.
;
Alves, E.
;
Wahl, U.
;
Monteiro, T.
;
Dalmasso, S.
;
Martin, R.W.
;
O'Donnell, K.P.
;
Vianden, R.
article
2003
Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
Cerqueira, M.F.
;
Stepikhova, M.
;
Losurdo, M.
;
Giangregorio, M.M.
;
Alves, E.
;
Monteiro, T.
;
Soares, M.J.
;
Boemare, C.
article
2004
Stability and optical activity of Er implanted MgO
Pinto, J.V.
;
Silva, R.C. da
;
Alves, E.
;
Soares, M.J.
;
Monteiro, T.
;
González, R.
article
2003
Lattice location and optical activation of rare earth implanted GaN
Wahl, U.
;
Alves, E.
;
Lorenz, K.
;
Correia, J.G.
;
Monteiro, T.
;
De Vries, B.
;
Vantomme, A.
;
Vianden, R.
article
2004
The Role of Microstructure in Luminescent Properties of Er-doped Nanocrystalline Si Thin Films
Stepikhova, M.V.
;
Cerqueira, M.F.
;
Losurdo, M.
;
Giangregorio, M.M.
;
Alves, E.
;
Monteiro, T.
;
Soares, M.J.
article
2006
Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition
Rogers, D.J.
;
Teherani, F.H.
;
Monteiro, T.
;
Soares, M.
;
Neves, A.
;
Carmo, M.
;
Pereira, S.
;
Correia, M.R.
;
Lusson, A.
;
Alves, E.
;
Barradas, N.P.
;
Morrod, J.K.
;
Prior, K.A.
;
Kung, P.
;
Yasan, A.
;
Razeghi, M.
conferenceObject
Jan-2007
Optical studies of ZnO nanocrystals doped with Eu3+ ions
Peres, M.
;
Cruz, A.
;
Pereira, S.
;
Correia, M. R.
;
Soares, M. J.
;
Neves, A.
;
Carmo, M. C.
;
Monteiro, T.
;
Pereira, A. S.
;
Martins, M. A.
;
Trindade, T.
;
Alves, E.
;
Nobre, S. S.
;
Ferreira, R.A. Sá
article
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Photoluminescence
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Optical properties
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Ion implantation
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GaN
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II-VI semiconductors
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PL
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