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Issue Date
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2001
Optical doping of nitrides by ion implantation
Alves, E.
;
Lorenz, K.
;
Vianden, R.
;
Boemare, C.
;
Soares, M.J.
;
Monteiro, T.
article
Sep-2007
Influence of the sol-gel growth parameters on the optical and structural properties on LiNbO3 samples
Graça, M.P.F.
;
Valente, M.A.
;
Peres, M.
;
Cruz, A.
;
Soares, M.J.
;
Neves, A.J.
;
Monteiro, T.
;
Alves, E.
;
Marques, C.
article
2007
Structural and optical properties of Er3+ ion in sol-gel grown LiNbO3
Graça, M.P.F.
;
Valente, M.A.
;
Peres, M.
;
Cruz, A.
;
Soares, M.J.
;
Neves, A.J.
;
Monteiro, T.
;
Alves, L.C.
;
Alves, E.
article
Apr-2007
Structural and optical characterisation of Eu implanted AlxGa1-xN
Lorenz, K.
;
Alves, E.
;
Monteiro, T.
;
Cruz, A.
;
Peres, M.
article
Apr-2007
Implantation of nanoporous GaN with Eu ions
Magalhães, S.
;
Lorenz, K.
;
Peres, M.
;
Monteiro, T.
;
Tripathy, S.
;
Alves, E.
article
2006
High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Lorenz, K.
;
Wahl, U.
;
Alves, E.
;
Nogales, E.
;
Dalmasso, S.
;
Martin, R.W.
;
O'Donnell, K.P.
;
Wojdak, M.
;
Braud, A.
;
Monteiro, T.
;
Wojtowicz, T.
;
Ruterana, P.
;
Ruffenach, S.
;
Briot, O.
article
2006
Stability and luminescence studies of Tm and Er implanted ZnO single crystals
Rita, E.
;
Alves, E.
;
Wahl, U.
;
Correia, J.G.
;
Monteiro, T.
;
Soares, M.J.
;
Neves, A.
;
Peres, M.
article
Jan-2001
Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers
Pereira, S.
;
Correia, M.R.
;
Monteiro, T.
;
Pereira, E.
;
Alves, E.
;
Sequeira, A.D.
;
Franco, N.
article
2006
Optical doping of AlN by rare earth implantation
Lorenz, K.
;
Alves, E.
;
Monteiro, T.
;
Soares, M.J.
;
Peres, M.
;
Smulders, P.J.M.
article
3-Nov-2009
Structural and optical properties of Zn0.9 Mn0.1 O/ZnO core-shell nanowires designed by pulsed laser deposition
Kaydashev, V.E.
;
Kaidashev, E.M.
;
Peres, M.
;
Monteiro, T.
;
Correia, M.R.
;
Sobolev, N.A.
;
Alves, L.C.
;
Franco, N.
;
Alves, E.
article
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10
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7
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Photoluminescence
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Ion implantation
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Optical properties
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GaN
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PL
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II-VI semiconductors
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RBS
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