| Issue Date | Title | Author(s) | Type | Access Type |
| 15-Dec-2018 | Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures | Fialho, M.; Magalhães, S.; Rodrigues, J.; Chauvat, M.P.; Ruterana, P.; Monteiro, T.; Lorenz, K.; Alves, E. | article |  |
| 21-Oct-2010 | Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation | Magalhães, S.; Peres, M.; Fellmann, V.; Daudin, B.; Neves, A.J.; Alves, E.; Monteiro, T.; Lorenz, K. | article | |
| 12-Aug-2020 | Impact of ion irradiation-induced interface intermixing on the magnetic and
electrical properties of magnetic tunnel junctions | Teixeira, B. M. S.; Timopheev, A. A.; Caçoilo, N.; Cuchet, L.; Mondaud, J.; Childress, J. R.; Magalhães, S.; Alves, E.; Sobolev, N. A. | article | |
| Apr-2007 | Implantation of nanoporous GaN with Eu ions | Magalhães, S.; Lorenz, K.; Peres, M.; Monteiro, T.; Tripathy, S.; Alves, E. | article |  |
| 7-May-2010 | Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots | Peres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Alves, E.; Lorenz, K.; Okuno-Vila, H.; Fellmann, V.; Bougerol, C.; Daudin, B. | article | |
| Jun-2019 | Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb | Rodrigues, J.; Fialho, M.; Magalhães, S.; Lorenz, K.; Alves, E.; Monteiro, T. | article | |
| 2010 | Optical and structural properties of an Eu implanted Gallium Nitride quantum Dots/Aluminium Nitride Superlattice | Peres, M.; Neves, A.J.; Monteiro, T.; Magalhães, S.; Franco, N.; Lorenz, K.; Alves, E.; Damilano, B.; Massies, J.; Dussaigne, A.; Grandjean, N. | article | |
| 2011 | Radiation damage formation and annealing in GaN and ZnO | Lorenz, K.; Peres, M.; Franco, N.; Marques, J.G.; Miranda, S.M.C.; Magalhães, S.; Monteiro, T.; Wesch, W.; Alves, E.; Wendler, E. | conferenceObject | |