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 Green and red emission in Ca implanted GaN samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6722

title: Green and red emission in Ca implanted GaN samples
authors: Monteiro, T.
Boemare, C.
Soares, M.J.
Alves, E.
Liu, C.
keywords: GaN
Activation energy
Binding energy
Gallium nitride
Hall effect
Ion implantation
Molecular beam epitaxy
Point defects
Rutherford backscattering spectroscopy
Semiconductor doping
Stacking faults
X ray analysis
Complex defects
Ionisation energy
Semiconducting gallium compounds
issue date: 2001
publisher: Elsevier
abstract: A comparison between unimplanted and annealed Ca implanted GaN samples was performed using PL and RBS techniques. Deep DAP recombination at 2.36 and 1.8 eV was found in both samples. New PL lines observed at 3.46, 3.368 and 2.59 eV in the implanted samples are discussed. Rutherford backscattering/channelling measurements reveal that 35% of Ca is located in substitutional Ga sites surrounded by complex defects. © 2001 Elsevier Science B.V. All rights reserved.
URI: http://hdl.handle.net/10773/6722
ISSN: 0921-4526
publisher version/DOI: http://dx.doi.org/10.1016/S0921-4526(01)00664-0
source: Physica B: Condensed Matter
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