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 Implantation and annealing studies of Tm-implanted GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6503

title: Implantation and annealing studies of Tm-implanted GaN
authors: Lorenz, K.
Alves, E.
Wahl, U.
Monteiro, T.
Dalmasso, S.
Martin, R.W.
O'Donnell, K.P.
Vianden, R.
keywords: CL
GaN
Ion implantation
Rare earth
RBS/channelling
Tm
issue date: 2003
publisher: Elsevier
abstract: Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500°C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated with the Rutherford backscattering (RBS)/channelling technique. We observe that implantation at 500°C considerably reduces the induced lattice damage and increases the amorphisation threshold. The lattice-site location of the implanted ions was determined by performing detailed channelling measurements for the 〈0001〉 and 〈101̄1〉 crystal directions. The results show that Tm ions mainly occupy substitutional Ga-sites directly after implantation and after annealing. The optical properties of the ion-implanted GaN films have been studied by room temperature cathodoluminescence (CL) measurements. Well-defined emission due to intra-4f shell transitions of the Tm3+ ions are observed in the blue spectral range at 477nm and in the near infra-red (IR) at 804nm
URI: http://hdl.handle.net/10773/6503
ISSN: 0921-5107
publisher version/DOI: dx.doi.org/10.1016/j.mseb.2003.08.023
source: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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