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 Lattice location and optical activation of rare earth implanted GaN
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6479

title: Lattice location and optical activation of rare earth implanted GaN
authors: Wahl, U.
Alves, E.
Lorenz, K.
Correia, J.G.
Monteiro, T.
De Vries, B.
Vantomme, A.
Vianden, R.
keywords: Channeling
GaN
Ion implantation
Luminescence; Rare earth
issue date: 2003
publisher: Elsevier
abstract: This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following low-dose (≈1013cm-2) implantation, both in the as-implanted state and after annealing up to 900°C, the lattice location of higher-dose implants (1014-1015cm-2) and their defect annealing behaviour were studied using the Rutherford backscattering/channeling (RBS/C) method. The available channeling and luminescence results suggest that the optical activation of implanted REs in GaN is related to their incorporation in substitutional Ga sites combined with the effective removal of the implantation damage
URI: http://hdl.handle.net/10773/6479
ISSN: 0921-5107
publisher version/DOI: dx.doi.org/10.1016/j.mseb.2003.08.031
source: Materials Science and Engineering B: Solid-State Materials for Advanced Technology
appears in collectionsFIS - Artigos

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