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 Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6195

title: Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
authors: Monteiro, T.
Soares, J.
Correia, M.R.
Alves, E.
keywords: oxygen
erbium
gallium compounds
III-V semiconductors
annealing
photoluminescence
Rutherford backscattering
ion implantation
impurity states
issue date: Mar-2001
publisher: AIP
abstract: Er-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified.
URI: http://hdl.handle.net/10773/6195
ISSN: 0021-8979
publisher version/DOI: link.aip.org/link/doi/10.1063/1.1369404
source: Journal of Applied Physics
appears in collectionsFIS - Artigos

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