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 Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6162

title: Compositional dependence of the strain-free optical band gap in InxGa1 - xN layers
authors: Pereira, S.
Correia, M.R.
Monteiro, T.
Pereira, E.
Alves, E.
Sequeira, A.D.
Franco, N.
keywords: Indium compounds
Gallium compounds
III-V semiconductors
Wide band gap semiconductors
Semiconductor epitaxial layers
Energy gap
Optical constants
Rutherford backscattering
Light absorption
issue date: Jan-2001
publisher: AIP
abstract: The effect of strain on the compositional and optical properties of a set of epitaxial single layers of InxGa12xN was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffraction measurements, allows perpendicular strain (e zz) to be evaluated. Optical band gaps were determined by absorption spectroscopy and corrected for strain. Following this approach, the strain free dependence of the optical band gap in InxGa12xN alloys was determined for x<0.25. Our results indicate an ‘‘anomalous,’’ linear, dependence of the energy gap on the In content, at room temperature: Eg(x)53.39– 3.57x eV. Extension of this behavior to higher concentrations is discussed on the basis of reported results
URI: http://hdl.handle.net/10773/6162
ISSN: 0003-6951
publisher version/DOI: link.aip.org/link/doi/10.1063/1.1358368
source: Applied Physics Letters
appears in collectionsFIS - Artigos

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