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 Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6094

title: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots
authors: Peres, M.
Neves, A.J.
Monteiro, T.
Magalhães, S.
Alves, E.
Lorenz, K.
Okuno-Vila, H.
Fellmann, V.
Bougerol, C.
Daudin, B.
keywords: III–V semiconductors
Molecular beam epitaxy
Optical properties
Quantum dots
issue date: 7-May-2010
publisher: WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
abstract: The influence of the post-growth thermal annealing on the structural and optical properties of GaN/AlN quantum dots (QDs) is reported. X-ray techniques suggest smooth and high quality interfaces of the stacked multilayer structures for the as-grown and annealed samples without any period thickness change. High-angle annular dark field images by scanning transmission electron microscopy show an intermixing between the GaN QDs and AlN spacers after annealing. The QDs recombination shifts to lower energies (red shift) for big dots and to higher energies (blue shift) for small dots, reflecting two competitive processes taking place during the thermal annealing
URI: http://hdl.handle.net/10773/6094
ISSN: 0370-1972
publisher version/DOI: dx.doi.org/10.1002/pssb.200983674
source: Physica Status Solidi (B) Basic Research
appears in collectionsFIS - Artigos
I3N - Artigos

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