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 Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6087

title: Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes
authors: Vacas, J.
Lahrèche, H.
Monteiro, T.
Caspar, C.
Pereira, E.
Brylinski, C.
Di Forte-Poisson, M.A.
keywords: Homojunction and heterojunction diodes
electroluminescence
deep level
issue date: 2000
publisher: Trans Tech Publ Ltd
abstract: A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.
URI: http://hdl.handle.net/10773/6087
ISSN: 0255-5476
publisher version/DOI: dx.doi.org/10.4028/www.scientific.net/MSF.338-342.1651
source: Materials Science Forum
appears in collectionsFIS - Artigos

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