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|title: ||Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes|
|authors: ||Vacas, J.|
Di Forte-Poisson, M.A.
|keywords: ||Homojunction and heterojunction diodes|
|issue date: ||2000|
|publisher: ||Trans Tech Publ Ltd|
|abstract: ||A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (≅-800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (≅1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.|
|publisher version/DOI: ||dx.doi.org/10.4028/www.scientific.net/MSF.338-342.1651|
|source: ||Materials Science Forum|
|appears in collections||FIS - Artigos|
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|MSF.pdf||versão pdf do editor||2.86 MB||Adobe PDF||view/open|
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