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 Rapid thermal annealing of rare earth implanted ZnO epitaxial layers
Please use this identifier to cite or link to this item http://hdl.handle.net/10773/6069

title: Rapid thermal annealing of rare earth implanted ZnO epitaxial layers
authors: Miranda, S.M.C.
Peres, M.
Monteiro, T.
Alves, E.
Sun, H.D.
Geruschke, T.
Vianden, R.
Lorenz, K.
keywords: Europium
Ion implantation
Zinc oxide
issue date: 2011
publisher: Elsevier
abstract: Zinc oxide epilayers grown by metal organic vapour phase epitaxy on (0 0 0 1) sapphire substrates were doped with Praseodymium and Europium by ion implantation. The as-implanted samples were either annealed in air for 20 min in a tube furnace or rapid thermal annealing (RTA) was performed, for 2 min, in a nitrogen atmosphere. The samples were characterized by Rutherford Backscattering Spectrometry/Channelling and photoluminescence. The presented results indicate that in the as-implanted samples the majority of the rare earth (RE) ions are incorporated into substitutional Zn-sites. Furnace annealing at 1000 °C recovers the crystal quality of the samples but leads to an out-diffusion of the RE. RTA suppresses diffusion but lattice damage is not fully recovered at 1000 °C. More importantly, during RTA the RE ions are driven from the substitutional site and are now found mainly on random interstitial sites and no optical activation could be achieved
URI: http://hdl.handle.net/10773/6069
ISSN: 0925-3467
publisher version/DOI: dx.doi.org/10.1016/j.optmat.2010.10.009
source: Optical Materials
appears in collectionsFIS - Artigos
I3N - Artigos

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