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Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/22214
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dc.contributor.authorMukherjee, Debaratipt
dc.contributor.authorAlves, Luis Neropt
dc.contributor.authorNeto, Miguelpt
dc.contributor.authorOliveira, Filipe J.pt
dc.contributor.authorSilva, Rui F.pt
dc.contributor.authorMendes, Joana Catarinapt
dc.date.accessioned2018-02-16T12:21:55Z-
dc.date.available2018-02-16T12:21:55Z-
dc.date.issued2016-06-10-
dc.identifier.urihttp://hdl.handle.net/10773/22214-
dc.description.abstractThis work reports the fabrication of diamond-SiC hetero-junctions through deposition of p-type polycrystalline diamond films on n-type SiC by HFCVD. The quality of the films was analyzed by SEM and Raman spectroscopy. The rectifying behaviour of these heterojunctions was demonstrated with room temperature I-V measurements.pt
dc.language.isoengpt
dc.publisherInstituto de Telecomunicaçõespt
dc.relationinfo:eu-repo/grantAgreement/FCT/3599-PPCDT/132939/PTpt
dc.relationstored-value> info:eu-repo/grantAgreement/FCT/SFRH/SFRH%2FBPD%2F90306%2F2012/PTpt
dc.rightsopenAccesspor
dc.titleFabrication and characterization of n-SiC / p-diamond heterojunctionspt
dc.typeconferenceObjectpt
dc.peerreviewedyespt
ua.publicationstatuspublishedpt
ua.event.date6-10 Junho, 2016pt
ua.event.typeconferencept
degois.publication.locationAveiro, Portugalpt
degois.publication.titleWorkshop on Compound Semiconductor Devices and Integrated Circuits /Expert Evaluation and Control of Compound Semiconductor Materials and Technologiespt
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