Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/19813
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tsui, H. C. L. | pt |
dc.contributor.author | Goff, L. E. | pt |
dc.contributor.author | Rhode, S. K. | pt |
dc.contributor.author | Pereira, S. | pt |
dc.contributor.author | Beere, H. E. | pt |
dc.contributor.author | Farrer, I. | pt |
dc.contributor.author | Nicoll, C. A. | pt |
dc.contributor.author | Ritchie, D. A. | pt |
dc.contributor.author | Moram, M. A. | pt |
dc.date.accessioned | 2017-12-07T19:25:44Z | - |
dc.date.available | 2017-12-07T19:25:44Z | - |
dc.date.issued | 2015 | pt |
dc.identifier.issn | 0003-6951 | pt |
dc.identifier.uri | http://hdl.handle.net/10773/19813 | - |
dc.description.abstract | Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 <= x <= 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I-1- and I-2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1-xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. (C) 2015 AIP Publishing LLC. | pt |
dc.language.iso | eng | pt |
dc.publisher | AMER INST PHYSICS | pt |
dc.relation | info:eu-repo/grantAgreement/FCT/5876/147332/PT | pt |
dc.rights | openAccess | por |
dc.subject | LIGHT-EMITTING-DIODES | pt |
dc.subject | ELECTRONIC-PROPERTIES | pt |
dc.subject | CUBIC GAN | pt |
dc.subject | SCGAN | pt |
dc.subject | FILMS | pt |
dc.subject | SCN | pt |
dc.subject | MICROSTRUCTURE | pt |
dc.subject | SPECTRA | pt |
dc.subject | SCAS | pt |
dc.title | Band gaps of wurtzite ScxGa1-xN alloys | pt |
dc.type | article | pt |
dc.peerreviewed | yes | pt |
ua.distribution | international | pt |
degois.publication.issue | 13 | pt |
degois.publication.title | APPLIED PHYSICS LETTERS | pt |
degois.publication.volume | 106 | pt |
dc.relation.publisherversion | 10.1063/1.4916679 | pt |
dc.identifier.doi | 10.1063/1.4916679 | pt |
Appears in Collections: | CICECO - Artigos |
Files in This Item:
File | Description | Size | Format | |
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Band gaps of wurtzite ScxGa1-xN alloys_10.10631.4916679.pdf | 621.04 kB | Adobe PDF | View/Open |
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