Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/19671
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dc.contributor.authorGayathri, T. H.pt
dc.contributor.authorYaremchenko, A. A.pt
dc.contributor.authorZakharchuk, K.pt
dc.contributor.authorJames, Josept
dc.date.accessioned2017-12-07T19:20:56Z-
dc.date.issued2016pt
dc.identifier.issn0925-8388pt
dc.identifier.urihttp://hdl.handle.net/10773/19671-
dc.description.abstractThe synthesis of Y1-x/2MgxV1-x/2O4-delta (MgxYV) (x = 0.0-0.5) by solid state reaction technique is reported. This preparation method is compared with chemical synthesis method such as nitrate-citrate auto-combustion route. The crystal structure and the surface morphology of the samples were determined by X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) techniques, respectively. Substantial decrease in phase formation temperature was observed for combustion method. The solubility limit of Mg in YVO4 lattice was found to be low i.e., x <= 0.1. The temperature dependence of conductivity of MgxYV samples indicated an increase in ionic conductivity values compared to the parent YVO4 due the formation of oxygen ion vacancies produced by the incorporation of acceptor Mg cations. Combustion-synthesized MgxYV samples showed higher conductivity compared to the samples prepared by conventional solid state reaction. (C) 2016 Elsevier B.V. All rights reserved.pt
dc.language.isoengpt
dc.publisherELSEVIER SCIENCE SApt
dc.relationinfo:eu-repo/grantAgreement/FCT/5876/147332/PTpt
dc.rightsrestrictedAccesspor
dc.subjectOXIDE-ION CONDUCTIVITYpt
dc.subjectCONDUCTORSpt
dc.subjectSRpt
dc.subjectMGpt
dc.subjectCApt
dc.subjectELECTROLYTESpt
dc.subjectTRANSPORTpt
dc.subjectEPRpt
dc.titleEffect of magnesium addition on the structural, microstructural and electrical properties of YVO4pt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage549pt
degois.publication.lastPage557pt
degois.publication.titleJOURNAL OF ALLOYS AND COMPOUNDSpt
degois.publication.volume672pt
dc.date.embargo10000-01-01-
dc.relation.publisherversion10.1016/j.jallcom.2016.02.210pt
dc.identifier.doi10.1016/j.jallcom.2016.02.210pt
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