Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/7086| Title: | Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers |
| Author: | Seitz, R. Gaspar, C. Monteiro, T. Pereira, E. Poisson, M.A. Beaumont, B. |
| Keywords: | Electron emission Electron energy levels Gas lasers Metallorganic chemical vapor deposition Monochromators Photoluminescence Photomultipliers Sapphire Substrates |
| Issue Date: | 1999 |
| Publisher: | MRS |
| Abstract: | In this study, an attempt was made to analyze the luminescence between 3.36 eV and 3.41 eV of nid hexagonal GaN samples grown on sapphire. Sample dependent emission lines with no donor-accetor pair (DAP) behavior were found. Based on the data, different kinds of recombination processes in the same spectral region were identified. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/7086 |
| DOI: | 10.1557/PROC-572-419 |
| ISSN: | 0272-9172 |
| Appears in Collections: | DFis - Comunicações |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1999 MRS Proc.pdf | versão pdf do editor | 3.37 MB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.