Utilize este identificador para referenciar este registo:
http://hdl.handle.net/10773/6722| Título: | Green and red emission in Ca implanted GaN samples |
| Autor: | Monteiro, T. Boemare, C. Soares, M.J. Alves, E. Liu, C. |
| Palavras-chave: | GaN Implantation PL RBS/C Activation energy Annealing Binding energy Calcium Gallium nitride Hall effect Ion implantation Molecular beam epitaxy Photoluminescence Point defects Rutherford backscattering spectroscopy Semiconductor doping Stacking faults X ray analysis Complex defects Ionisation energy Semiconducting gallium compounds |
| Data: | 2001 |
| Editora: | Elsevier |
| Resumo: | A comparison between unimplanted and annealed Ca implanted GaN samples was performed using PL and RBS techniques. Deep DAP recombination at 2.36 and 1.8 eV was found in both samples. New PL lines observed at 3.46, 3.368 and 2.59 eV in the implanted samples are discussed. Rutherford backscattering/channelling measurements reveal that 35% of Ca is located in substitutional Ga sites surrounded by complex defects. © 2001 Elsevier Science B.V. All rights reserved. |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/6722 |
| DOI: | 10.1016/S0921-4526(01)00664-0 |
| ISSN: | 0921-4526 |
| Aparece nas coleções: | DFis - Artigos |
Ficheiros deste registo:
| Ficheiro | Descrição | Tamanho | Formato | |
|---|---|---|---|---|
| 2001_Physica-B-Condensed-Matter1.pdf | versão pdf do editor | 202.94 kB | Adobe PDF |  |
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