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http://hdl.handle.net/10773/6720
Título: | Photoluminescence and lattice location of Eu and Pr implanted GaN samples |
Autor: | Monteiro, T. Boemare, C. Soares, M. J. Ferreira, R. A. Sá Carlos, L. D. Lorenz, K. Vianden, R. Alves, E. |
Palavras-chave: | GaN Implantation PL RBS Gallium nitride Ion implantation Metallorganic chemical vapor deposition Photoluminescence Rapid thermal annealing Rare earth elements Semiconducting films Semiconductor doping Lattice locations Semiconducting gallium compounds |
Data: | 2001 |
Editora: | Elsevier |
Resumo: | Rare earth (RE) ions implanted GaN films were studied by optical spectroscopy and RBS techniques. Sharp emission lines due to intra-4fn shell transitions can be observed even at room temperature for the Eu3+ and Pr3+. The photoluminescence spectra recorded by the above band gap excitation reveal dominant transitions due to the 5D0→7F1,2,3 lines at 6004, 6211 and 6632Å for the Eu3+ and 3P0,1→3F2,3 at 6450 and 6518Å, respectively, for the Pr3+. We report on the temperature dependence of the intra-ionic emissions as well as on the lattice site location of the RE detailed angular scans through the 〈0001〉 and 〈101̄1〉 axial directions; which indicates that for Pr, complete substitutionality on the Ga sites was achieved while for Eu a Ga displaced site was found. © 2001 Elsevier Science B.V. All rights reserved. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6720 |
DOI: | 10.1016/S0921-4526(01)00656-1 |
ISSN: | 0921-4526 |
Aparece nas coleções: | DFis - Artigos |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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2001_Physica-B-Condensed-Matter.pdf | versão pdf do editor | 115.57 kB | Adobe PDF |
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