Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6636
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dc.contributor.authorCerqueira, M.F.pt
dc.contributor.authorStepikhova, M.pt
dc.contributor.authorLosurdo, M.pt
dc.contributor.authorMonteiro, T.pt
dc.contributor.authorSoares, M.J.pt
dc.contributor.authorPeres, M.pt
dc.contributor.authorNeves, A.pt
dc.contributor.authorAlves, E.pt
dc.date.accessioned2012-02-18T10:52:26Z-
dc.date.available2012-02-18T10:52:26Z-
dc.date.issued2006-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/10773/6636-
dc.description.abstractErbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 μm photoluminescence is discussed.pt
dc.description.sponsorshipFCT - POCTI/CTM/39395/2001pt
dc.description.sponsorshipINTAS - 03/51-6486pt
dc.language.isoengpt
dc.publisherMSFpt
dc.relation.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-37849050163&partnerID=40&md5=5779b3fd46505fd2553b5f8e100e191b-
dc.rightsopenAccesspor
dc.subjectEllipsometrypt
dc.subjectPhotoluminescencept
dc.subjectSilicon QDpt
dc.subjectStructurept
dc.titleEffect of the matrix on the 1.5 μm photoluminescence of Er-doped silicon quantum dotspt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternational-
degois.publication.firstPage1116pt
degois.publication.issuePART 2-
degois.publication.lastPage1120pt
degois.publication.titleMaterials Science Forum-
degois.publication.volume514-516pt
dc.identifier.doi10.4028/www.scientific.net/MSF.514-516.1116*
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