Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6523
Title: Radiation-damage recovery in undoped and oxidized Li doped MgO crystals implanted with lithium ions
Author: Alves, E.
Silva, R.C.
Pinto, J.V.
Monteiro, T.
Savoini, B.
Cáceres, D.
González, R.
Chen, Y.
Keywords: Li doping
MgO crystals
Optical absorption
RBS/channeling
Issue Date: 2003
Publisher: Elsevier
Abstract: Undoped MgO and oxidized Li-doped MgO single crystals were implanted with 1×1017 Li+/cm2 at 175 keV. The Rutherford backscattering spectrometry (RBS)/channeling data obtained after implantation shows that damage was produced throughout the entire range of the implanted ions. Optical absorption measurements indicate that after implantation the most intense band occurs at ≈5.0 eV, which has been associated with anion vacancies. After annealing at 450 K the intensity of the oxygen-vacancy band decreases monotonically with temperature and completely disappears at 950 K. A broad extinction band centered at ≈2.14 eV associated with lithium precipitates emerges gradually and anneals out at 1250 K. RBS/channeling shows that recovery of the implantation damage is completed after annealing the oxidized samples at 1250 K.
Peer review: yes
URI: http://hdl.handle.net/10773/6523
DOI: 10.1016/S0168-583X(03)00704-3
ISSN: 0168-583X
Appears in Collections:FIS - Artigos

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