Please use this identifier to cite or link to this item:
http://hdl.handle.net/10773/6495| Title: | Complex formation in Mn-doped GaP samples |
| Author: | Monteiro, T. Pereira, E. |
| Keywords: | GaP Photoluminescence |
| Issue Date: | 1991 |
| Publisher: | Elsevier |
| Abstract: | It is known that Mn in n-type GaP undergoes complexation upon annealing at temperatures close to 1000° C. An investigation of the optical properties of annealed Mn-doped GaP is carried out by several techniques. Photoluminescence (PL) and time-resolved spectroscopy (TRS) are combined with lifetime measurements at different temperatures. A new broad photoluminescence band peaking at 2.03 eV at low temperatures is investigated. This band has the characteristics of a bound exciton and is interpreted as due to a nearest-neighbour Mn complex with a donor |
| Peer review: | yes |
| URI: | http://hdl.handle.net/10773/6495 |
| DOI: | 10.1016/0169-4332(91)90175-J |
| ISSN: | 0169-4332 |
| Appears in Collections: | DFis - Artigos |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ASS.pdf | versão pdf do editor | 2.57 MB | Adobe PDF |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.