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Title: Study of calcium implanted GaN
Author: Alves, E.
Liu, C.
Lopes, E.B.
Da Silva, M.F.
Soares, J.C.
Boemare, C.
Soares, M.J.
Monteiro, T.
Keywords: GaN
Lattice location
Issue Date: 2002
Publisher: Elsevier
Abstract: Single crystalline GaN samples were implanted with several fluences of Ca ions at room temperature (RT) and 550 °C. The implantation at high temperature reduces significantly the damage. The measured minimum yield along the 〈0 0 0 1〉 axis in the implanted region increases from 15% to 40% when the substrate temperature during the implantation was changed from 550 °C and RT. The lattice site location was analysed simultaneously by measuring channeling effect on the backscattering particles and the particle-induced X-ray emission. Despite the different damage level, the regular fraction of Ca atoms in GaN lattice in both implantation conditions was roughly the same directly after the implantation (fs ∼ 50%), as indicated by the angular scans. Annealing at 1050 °C for 15 min in flowing N2 results in a significant recovery of the damage, but no changes were found for the Ca profile. The angular scans along the 〈0 0 0 1〉 and 〈1 0 1̄ 1〉 axial directions indicate that Ca is occupying mainly interstitial sites
Peer review: yes
DOI: 10.1016/S0168-583X(01)01187-9
ISSN: 0168-583X
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