Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6162
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dc.contributor.authorPereira, S.pt
dc.contributor.authorCorreia, M.R.pt
dc.contributor.authorMonteiro, T.pt
dc.contributor.authorPereira, E.pt
dc.contributor.authorAlves, E.pt
dc.contributor.authorSequeira, A.D.pt
dc.contributor.authorFranco, N.pt
dc.date.accessioned2012-02-10T11:00:02Z-
dc.date.available2012-02-10T11:00:02Z-
dc.date.issued2001-01-
dc.identifier.issn0003-6951pt
dc.identifier.urihttp://hdl.handle.net/10773/6162-
dc.description.abstractThe effect of strain on the compositional and optical properties of a set of epitaxial single layers of InxGa12xN was studied. Indium content was measured free from the effects of strain by Rutherford backscattering spectrometry. Accurate knowledge of the In mole fraction, combined with x-ray diffraction measurements, allows perpendicular strain (e zz) to be evaluated. Optical band gaps were determined by absorption spectroscopy and corrected for strain. Following this approach, the strain free dependence of the optical band gap in InxGa12xN alloys was determined for x<0.25. Our results indicate an ‘‘anomalous,’’ linear, dependence of the energy gap on the In content, at room temperature: Eg(x)53.39– 3.57x eV. Extension of this behavior to higher concentrations is discussed on the basis of reported resultspt
dc.language.isoengpt
dc.publisherAIPpt
dc.relation.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-0035831850&partnerID=40&md5=4ce064d55d3124b567c127c4502ff73b-
dc.rightsopenAccesspor
dc.subjectIndium compoundspt
dc.subjectGallium compoundspt
dc.subjectIII-V semiconductorspt
dc.subjectWide band gap semiconductorspt
dc.subjectSemiconductor epitaxial layerspt
dc.subjectEnergy gappt
dc.subjectOptical constantspt
dc.subjectStoichiometrypt
dc.subjectRutherford backscatteringpt
dc.subjectLight absorptionpt
dc.titleCompositional dependence of the strain-free optical band gap in InxGa1 - xN layerspt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage2137pt
degois.publication.issue15-
degois.publication.issue15pt
degois.publication.lastPage2139pt
degois.publication.titleApplied Physics Letterspt
degois.publication.volume78pt
dc.relation.publisherversionlink.aip.org/link/doi/10.1063/1.1358368*
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