Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/6127
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dc.contributor.authorMagalhães, S.pt
dc.contributor.authorPeres, M.pt
dc.contributor.authorFellmann, V.pt
dc.contributor.authorDaudin, B.pt
dc.contributor.authorNeves, A.J.pt
dc.contributor.authorAlves, E.pt
dc.contributor.authorMonteiro, T.pt
dc.contributor.authorLorenz, K.pt
dc.date.accessioned2012-02-09T16:34:38Z-
dc.date.available2012-02-09T16:34:38Z-
dc.date.issued2010-10-21-
dc.identifier.issn0021-8979pt
dc.identifier.urihttp://hdl.handle.net/10773/6127-
dc.description.abstractSelf-assembled GaN quantum dots (QDs) stacked in superlattices (SL) with AlN spacer layers were implanted with Europium ions to fluences of 1013, 1014, and 1015 cm−2. The damage level introduced in the QDs by the implantation stays well below that of thick GaN epilayers. For the lowest fluence, the structural properties remain unchanged after implantation and annealing while for higher fluences the implantation damage causes an expansion of the SL in the [0001] direction which increases with implantation fluence and is only partly reversed after thermal annealing at 1000 °C. Nevertheless, in all cases, the SL quality remains very good after implantation and annealing with Eu ions incorporated preferentially into near-substitutional cation sites. Eu3+ optical activation is achieved after annealing in all samples. In the sample implanted with the lowest fluence, the Eu3+ emission arises mainly from Eu incorporated inside the QDs while for the higher fluences only the emission from Eu inside the AlN-buffer, capping, and spacer layers is observed. © 2010 American Institute of Physicspt
dc.description.sponsorshipFCT-PTDC/CTM/100756/2008pt
dc.description.sponsorshipprogram PESSOA EGIDE/GRICESpt
dc.description.sponsorshipFCT-SFRH/BD/45774/2008pt
dc.description.sponsorshipFCT-SFRH/BD/44635/2008pt
dc.language.isoengpt
dc.publisherAIPpt
dc.relation.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-78149443374&partnerID=40&md5=7568fa11c029d53a99ac6f70b0cf4fc4-
dc.rightsopenAccesspor
dc.subjectAluminium compoundspt
dc.subjectAnnealingpt
dc.subjectEuropiumpt
dc.subjectGallium compoundspt
dc.subjectIII-V semiconductorspt
dc.subjectIon implantationpt
dc.subjectSelf-assemblypt
dc.subjectSemiconductor quantum dotspt
dc.subjectSemiconductor superlatticespt
dc.subjectWide band gap semiconductorspt
dc.titleFunctionalizing self-assembled GaN quantum dot superlattices by Eu-implantationpt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage084306-1pt
degois.publication.issue8-
degois.publication.issue8pt
degois.publication.lastPage084306-6pt
degois.publication.titleJournal of Applied Physicspt
degois.publication.volume108pt
dc.relation.publisherversionlink.aip.org/link/doi/10.1063/1.3496624*
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