Utilize este identificador para referenciar este registo:
http://hdl.handle.net/10773/6091
Título: | Electrical and photoelectronic properties of hexagonal GaN |
Autor: | Seitz, R. Gaspar, C. Monteiro, T. Pereira, L. Pereira, E. Schön, Q. Heuken, M. |
Palavras-chave: | Activation energy Energy gap Optoelectronic devices Photoconductivity Photoluminescence Semiconducting films |
Data: | 1999 |
Editora: | Wiley-VCH Verlag Berlin GmbH |
Resumo: | Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and ≈2eV. The dark current and the yellow photoluminescence band show the same activation energy (42 meV) supporting therefore the model that relates the yellow band to a shallow donor to a deep acceptor transition. The photocurrent is thermally quenched with an activation energy of 77 meV. |
Peer review: | yes |
URI: | http://hdl.handle.net/10773/6091 |
ISSN: | 0031-8965 |
Versão do Editor: | link.aps.org/doi/10.1103/PhysRevB.77.075103 |
Aparece nas coleções: | DFis - Artigos |
Ficheiros deste registo:
Ficheiro | Descrição | Tamanho | Formato | |
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PhysStat.pdf | versão pdf do editor | 140.2 kB | Adobe PDF |
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