Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/5668
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dc.contributor.authorMonteiro, T.pt
dc.contributor.authorBoemare, C.pt
dc.contributor.authorSoares, M.J.pt
dc.contributor.authorRita, E.pt
dc.contributor.authorAlves, E.pt
dc.date.accessioned2012-02-01T12:42:06Z-
dc.date.available2012-02-01T12:42:06Z-
dc.date.issued2003-06-
dc.identifier.issn0021-8979pt
dc.identifier.urihttp://hdl.handle.net/10773/5668-
dc.description.abstractWe report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (χmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is fully recovered after annealing at 1050 °C with a χmin∼3% in the implanted region. With extrinsic excitation, red Fe-related emission is observed at low temperatures. The intensity is dependent on the annealing conditions. For samples annealed in air, the luminescence can be detected up to 120 K. When a comparison is made between unimplanted and post-implanted annealed samples, noticeable changes on near-band-edge and deep-level photoluminescence spectra are observed. A thermally populated structured green emission could be observed in the sample annealed in air, as shown by the temperature-dependent photoluminescence excitation studies.pt
dc.language.isoengpt
dc.publisherAmerican Institute of Physicspt
dc.relationdx.doi.org/10.1063/1.1573341pt
dc.relation.urihttp://www.scopus.com/inward/record.url?eid=2-s2.0-0038341867&partnerID=40&md5=d7c4b0b95737f0a6164fea4258ec3657-
dc.rightsopenAccesspor
dc.titlePhotoluminescence and damage recovery studies in Fe-implanted ZnO single crystalspt
dc.typearticlept
dc.peerreviewedyespt
ua.distributioninternationalpt
degois.publication.firstPage8995pt
degois.publication.issue11pt
degois.publication.issue11-
degois.publication.lastPage9000pt
degois.publication.titleJournal of Applied Physicspt
degois.publication.volume93pt
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