Please use this identifier to cite or link to this item: http://hdl.handle.net/10773/5666
Title: PL studies on ZnO single crystals implanted with thulium ions
Author: Peres, M.
Wang, J.
Soares, M. J.
Neves, A.
Monteiro, T.
Rita, E.
Wahl, U.
Correia, J. G.
Alves, E.
Keywords: Tm doped ZnO
ion implantation
structural and optical properties
Issue Date: Oct-2004
Publisher: Elsevier
Abstract: ZnO single crystals implanted with different fluences of thulium ions and subject to different annealing conditions present multiple-Tm related optical centres. After implantation, the Tm ions are incorporated in a highly damaged region, some of them being placed at Zn sites (SZn). Following annealing, the optical activation of Tm ions is accompanied by a progressive lattice recovery. The main intraionic luminescence, observed with above band gap excitation, is dominated by the near infrared emission due to the transition and can be observed up to near RT.
Peer review: yes
URI: http://hdl.handle.net/10773/5666
DOI: 10.1016/j.spmi.2004.09.031
ISSN: 0749-6036
Appears in Collections:FIS - Artigos

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