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http://hdl.handle.net/10773/5633
Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Peres, Marco | pt |
dc.contributor.author | Magalhães, Sérgio | pt |
dc.contributor.author | Franco, N. | pt |
dc.contributor.author | Soares, Manuel | pt |
dc.contributor.author | Neves, Armando | pt |
dc.contributor.author | Alves, E. | pt |
dc.contributor.author | Lorenz, K. | pt |
dc.contributor.author | Monteiro, Teresa | pt |
dc.date.accessioned | 2012-01-31T11:40:54Z | - |
dc.date.issued | 2009-02 | - |
dc.identifier.issn | 0026-2692 | pt |
dc.identifier.uri | http://hdl.handle.net/10773/5633 | - |
dc.description | Partilhar documento na coleção da comunidade Laboratório Associado I3N | pt |
dc.description.abstract | The effects of the AlN molar fraction on structural and optical properties of praseodymium implanted AlxGa1−xN (0⩽x⩽1) layers were investigated. Using photoluminescence and excitation luminescence techniques we are able to observe the intra-4f23P1→3H5 (526 nm) and 3P0→3F2 (652 nm) transitions of the Pr3+ ion. The red emission peak position shifts to lower energies with increasing Al content in the alloys. The peak full-width at half-maximum increases with the Al content up to x=0.7 due to disorder effects. The implantation damage and Pr-incorporation was investigated by Rutherford backscattering spectrometry doing channelling measurements along the 〈0 0 0 1〉 direction. X-ray diffraction reciprocal space maps show an expansion of the c lattice parameter in the implanted region which is reversed after thermal annealing at 1300 °C. | pt |
dc.description.sponsorship | FCT-POCI/FIS/57550/2004 | pt |
dc.language.iso | eng | pt |
dc.publisher | Elsevier | pt |
dc.relation.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-58749106418&partnerID=40&md5=4d9ac579db817feaff1ea63a67e7d15f | |
dc.rights | restrictedAccess | por |
dc.subject | AlGaN | pt |
dc.subject | Rare earth doping | pt |
dc.subject | XRD | pt |
dc.subject | RBS/C | pt |
dc.subject | PL | pt |
dc.subject | PLE | pt |
dc.title | Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0≤x≤1) alloys | pt |
dc.type | article | pt |
dc.peerreviewed | yes | pt |
ua.distribution | international | pt |
degois.publication.firstPage | 377 | pt |
degois.publication.issue | 2 | pt |
degois.publication.issue | 2 | |
degois.publication.lastPage | 380 | pt |
degois.publication.title | Microelectronics Journal | pt |
degois.publication.volume | 40 | pt |
dc.date.embargo | 10000-01-01 | - |
dc.identifier.doi | 10.1016/j.mejo.2008.07.032 | * |
Appears in Collections: | DFis - Artigos |
Files in This Item:
File | Description | Size | Format | |
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MJ.pdf | versão pdf do editor | 975.55 kB | Adobe PDF | ![]() |
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