Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1-xN (0≤x≤1) alloys

Abstract

The effects of the AlN molar fraction on structural and optical properties of praseodymium implanted AlxGa1−xN (0⩽x⩽1) layers were investigated. Using photoluminescence and excitation luminescence techniques we are able to observe the intra-4f23P1→3H5 (526 nm) and 3P0→3F2 (652 nm) transitions of the Pr3+ ion. The red emission peak position shifts to lower energies with increasing Al content in the alloys. The peak full-width at half-maximum increases with the Al content up to x=0.7 due to disorder effects. The implantation damage and Pr-incorporation was investigated by Rutherford backscattering spectrometry doing channelling measurements along the 〈0 0 0 1〉 direction. X-ray diffraction reciprocal space maps show an expansion of the c lattice parameter in the implanted region which is reversed after thermal annealing at 1300 °C.